A new and simple means for self-assembled nanostructure: Facilitated by buffer layer

被引:17
作者
Hsu, CL
Yang, SS
Tseng, YK
Chen, IC
Lin, YR [1 ]
Chang, SJ
Wu, ST
机构
[1] Ind Technol Res Inst, Mat Res Labs, Hsinchu 31040, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan
关键词
D O I
10.1021/jp0456382
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
One-dimensional semiconductor nanomaterials are expected to be important components in future nanodevices. The well-controlled growth of the nanomaterials is the most important aspect of nano-devices production. A new and simple means of growing ZnO nanowire (NW) arrays using a TiN buffer layer, but without using any catalysis or template, was proposed although the crystal structure thus obtained differed entirely from that of ZnO.
引用
收藏
页码:18799 / 18803
页数:5
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