A new and simple means for self-assembled nanostructure: Facilitated by buffer layer

被引：17

作者：

Hsu, CL

Yang, SS

Tseng, YK

Chen, IC

Lin, YR ^{[1
]}

Chang, SJ

Wu, ST

机构：

[1] Ind Technol Res Inst, Mat Res Labs, Hsinchu 31040, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2004年 / 108卷 / 49期

关键词：

D O I：

10.1021/jp0456382

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

One-dimensional semiconductor nanomaterials are expected to be important components in future nanodevices. The well-controlled growth of the nanomaterials is the most important aspect of nano-devices production. A new and simple means of growing ZnO nanowire (NW) arrays using a TiN buffer layer, but without using any catalysis or template, was proposed although the crystal structure thus obtained differed entirely from that of ZnO.

引用

页码：18799 / 18803

页数：5

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