Cd free CIGS solar cells fabricated by dry processes

被引：28

作者：

Negami, T ^{[1
]}

Aoyagi, T ^{[1
]}

Satoh, T ^{[1
]}

Shimakawa, S ^{[1
]}

Hayashi, S ^{[1
]}

Hashimoto, Y ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Kyoto 6190237, Japan

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190650

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Dry processes for fabrication of CIGS solar cells are suitable for high throughput mass. production based on physical vapor deposition. We report on Cd free CIGS solar cells fabricated by dry processes. To form a homo pn junction,. Zn doped. into the CIGS surface by Zn evaporation and substrate heating after the preparation of the CIGS films. Zn1-xMgxO films with controllable band offset to CIGS films were directly prepared onto the Zn doped surface,by sputtering. Cell performances were improved by post-annealing of devices. The cell, fabricated by the dry processes showed an efficiency of 16.2%.

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收藏

页码：656 / 659

页数：4

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