Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire

被引：64

作者：

Kim, Kyoungwon ^{[1
,2
,3
]}

Debnath, Pulak Chandra ^{[1
]}

Park, Dong-Hoon ^{[1
]}

Kim, Sangsig ^{[2
,3
]}

Lee, Sang Yeol ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Ctr Energy Mat Res, Seoul 136791, South Korea

[2] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

[3] Korea Univ, Inst Nanosci, Seoul 136701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 08期

关键词：

carrier density; field effect transistors; II-VI semiconductors; nanowires; pulsed laser deposition; semiconductor quantum wires; silver; wide band gap semiconductors; zinc compounds; THIN-FILM TRANSISTORS; ZINC-OXIDE; FABRICATION; ARRAYS;

D O I：

10.1063/1.3327826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silver doped zinc oxide nanowires (NWs) were synthesized on (0001) sapphire substrate by hot-walled pulsed laser deposition. Both enhancement mode and depletion mode NW field effect transistors (FETs) were fabricated. The shift of threshold voltage of silver doped zinc oxide NW FET was observed from 2.45 to -3.2 V depending on the diameter of NWs without any significant changes of the subthreshold swing, carrier concentration, and on/off ratios. We demonstrate that the transfer characteristics of silver doped zinc oxide NW FETs were closely related with the size of NW diameter and control the shift of threshold voltage.

引用

页数：3

共 23 条

[1] Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide [J].

Barquinha, P. ;

Pimentel, A. ;

Marques, A. ;

Pereira, L. ;

Martins, R. ;

Fortunato, E. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1749-1752

[2] Size dependence of Young's modulus in ZnO nanowires [J].

Chen, CQ ;

Shi, Y ;

Zhang, YS ;

Zhu, J ;

Yan, YJ .

PHYSICAL REVIEW LETTERS, 2006, 96 (07)

[3] Enhancement of ultraviolet emissions from ZnO films by Ag doping [J].

Duan, Li ;

Lin, Bixia ;

Zhang, Weiying ;

Zhong, Sheng ;

Fu, Zhuxi .

APPLIED PHYSICS LETTERS, 2006, 88 (23)

[4] Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Martins, RFP ;

Pereira, LMN .

APPLIED PHYSICS LETTERS, 2004, 85 (13) :2541-2543

[5] Realization of highly reproducible ZnO nanowire field effect transistors with n-channel depletion and enhancement modes [J].

Hong, Woong-Ki ;

Hwang, Dae-Kue ;

Park, Il-Kyu ;

Jo, Gunho ;

Song, Sunghoon ;

Park, Seong-Ju ;

Lee, Takhee ;

Kim, Bong-Joong ;

Stach, Eric A. .

APPLIED PHYSICS LETTERS, 2007, 90 (24)

[6] Modeling and simulation of polycrystalline ZnO thin-film transistors [J].

Hossain, FM ;

Nishii, J ;

Takagi, S ;

Ohtomo, A ;

Fukumura, T ;

Fujioka, H ;

Ohno, H ;

Koinuma, H ;

Kawasaki, M .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (12) :7768-7777

[7] Structural, electrical, and optical properties of p-type ZnO thin films with Ag dopant [J].

Kang, Hong Seong ;

Du Ahn, Byung ;

Kim, Jong Hoon ;

Kim, Gun Hee ;

Lim, Sung Hoon ;

Chang, Hyun Woo ;

Lee, Sang Yeol .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

[8] A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process [J].

Keem, Kihyun ;

Kang, Jeongmin ;

Yoon, Changjoon ;

Yeom, Donghyuk ;

Jeong, Dong-Young ;

Moon, Byung-Moo ;

Kim, Sangsig .

MICROELECTRONIC ENGINEERING, 2007, 84 (5-8) :1622-1626

[9] Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors [J].

Keem, Kihyun ;

Jeong, Dong-Young ;

Kim, Sangsig ;

Lee, Moon-Sook ;

Yeo, In-Seok ;

Chung, U-In ;

Moon, Joo-Tae .

NANO LETTERS, 2006, 6 (07) :1454-1458

[10] Fabrication and characterization of Ga-doped ZnO nanowire gas sensor for the detection of CO [J].

Kim, Kyoungwon ;

Song, Yong-Won ;

Chang, Seongpil ;

Kim, In-Ho ;

Kim, Sangsig ;

Lee, Sang Yeol .

THIN SOLID FILMS, 2009, 518 (04) :1190-1193

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