Ellipsometric and thermoreflectance spectra of (AlxGa1-x)(0.5)In0.5P alloys

被引:30
作者
Ozaki, S
Adachi, S
Sato, M
Ohtsuka, K
机构
[1] GUNMA UNIV,FAC ENGN,DEPT ELECTR ENGN,KIRYU,GUMMA 376,JAPAN
[2] SANYO ELECT CO LTD,DIV RES & DEV,NIIZA,SAITAMA 352,JAPAN
关键词
D O I
10.1063/1.360850
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spectroscopic-ellipsometry (SE) and thermoreflectance (TR) spectra of (AlxGa1-x)(0.5)In0.5P quaternary alloys are presented. Both measurements are carried out on the same samples in the 1-6 eV photon-energy range at room temperature, These spectra are analyzed based on a simple model of the interbarid transitions. The results are in satisfactory agreement with the experimental SE and TR data over the entire range of photon energies. The composition dependence of the interband critical-point and indirect-band-gap energies is also discussed. (C) 1996 American Institute of Physics.
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页码:439 / 445
页数:7
相关论文
共 28 条
[1]   OPTICAL-PROPERTIES OF ALXGA1-XAS ALLOYS [J].
ADACHI, S .
PHYSICAL REVIEW B, 1988, 38 (17) :12345-12352
[2]   REFRACTIVE-INDEX OF (ALXGA1-X)(0.5)IN0.5P QUATERNARY ALLOYS [J].
ADACHI, S ;
KATO, H ;
MOKI, A ;
OHTSUKA, K .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) :478-480
[3]  
ADACHI S, UNPUB
[4]  
ADACHI S, 1994, GAAS RELATED MATERIA
[5]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS [J].
ASAHI, H ;
KAWAMURA, Y ;
NAGAI, H .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4928-4931
[6]   ELECTOREFLECTANCE STUDY OF ALXGA1-X-YINYP ALLOY [J].
ASAMI, K ;
ASAHI, H ;
GONDA, S ;
KAWAMURA, Y ;
TANAKA, H .
SOLID STATE COMMUNICATIONS, 1989, 70 (01) :33-35
[7]  
Aspnes D. E., 1976, OPTICAL PROPERTIES S, P799
[8]   DIELECTRIC FUNCTION AND SURFACE MICROROUGHNESS MEASUREMENTS OF INSB BY SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1057-1060
[9]   DIRECT VERIFICATION OF THIRD-DERIVATIVE NATURE OF ELECTROREFLECTANCE SPECTRA [J].
ASPNES, DE .
PHYSICAL REVIEW LETTERS, 1972, 28 (03) :168-&
[10]  
Bour, 1993, QUANTUM WELL LASERS, P415