Highly sensitive plasma absorption probe for measuring low-density high-pressure plasmas

被引:88
作者
Nakamura, K
Ohata, M
Sugai, H
机构
[1] Chubu Univ, Coll Engn, Dept Elect Engn, Kasugai, Aichi 4878501, Japan
[2] Nagoya Univ, Dept Elect Engn, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2003年 / 21卷 / 01期
关键词
D O I
10.1116/1.1532740
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This article reports a new type of sensitive plasma absorption probe (PAP), which is characterized with a thin wire antenna directly exposed to plasma. In the sensitive PAP, the power reflection coefficient resonantly decreases at a certain frequency due to absorption of a surface wave, which is excited along a sheath formed around the antenna. The electron density is derived from the measured absorption frequency in comparison to a wave dispersion relation: the dispersion is calculated under assumptions that the sheath width is twice the Debye length and that wavelength is twice the antenna length. This sensitive PAP also enables measurements of very low electron densities (similar to10(8) cm(-3)) and very high pressures (similar to10 Torr), in comparison to a conventional standard PAP. In addition, both electron temperature and electron density can be measured using a pair of sensitive PAPs of different antenna radii. (C) 2003 American Vacuum Society.
引用
收藏
页码:325 / 331
页数:7
相关论文
共 12 条
[1]  
Kinoshita K., 2001, P 25 INT C PHEN ION, V2, P77
[2]   Wall heating effect on crystallization of low-temperature deposited silicon films from an inductively-coupled plasma [J].
Kojima, T ;
Ohishi, A ;
Toyoda, H ;
Goto, M ;
Nishitani, M ;
Sugai, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (01) :322-325
[3]   Diagnostic of surface wave plasma for oxide etching in comparison with inductive RF plasma [J].
Kokura, H ;
Yoneda, S ;
Nakamura, K ;
Mitsuhira, N ;
Nakamura, M ;
Sugai, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9A) :5256-5261
[4]   Plasma absorption probe for measuring electron density in an environment soiled with processing plasmas [J].
Kokura, H ;
Nakamura, K ;
Ghanashev, IP ;
Sugai, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9A) :5262-5266
[5]   Alternating ion bombardment technique for wall surface control in depositive plasma processing [J].
Nakamura, K ;
Ohwaki, M ;
Yoneda, S ;
Sugai, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (01) :137-142
[6]  
NAKAMURA K, 2001, P 25 INT C PHEN ION, V4, P273
[7]  
OHATA M, 2001, P 25 INT C PHEN ION, V4, P275
[8]   PLASMA OSCILLATION METHOD FOR MEASUREMENTS OF ABSOLUTE ELECTRON-DENSITY IN PLASMA [J].
SHIRAKAWA, T ;
SUGAI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (11A) :5129-5135
[9]   Electron energy distribution functions and the influence on fluorocarbon plasma chemistry [J].
Sugai, H ;
Ghanashev, I ;
Hosokawa, M ;
Mizuno, K ;
Nakamura, K ;
Toyoda, H ;
Yamauchi, K .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 2001, 10 (02) :378-385
[10]  
Toyoda N., 2001, P 25 INT C PHEN ION, V3, P205