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Some recent developments in the MOCVD and ALD of high-κ dielectric oxides

被引：75
作者：
Jones, AC
Aspinall, HC
Chalker, PR
Potter, RJ
Kukli, K
Rahtu, A
Ritala, M
Leskelä, M
机构：
[1] Univ Liverpool, Dept Chem, Liverpool L69 3ZD, Merseyside, England
[2] Univ Liverpool, Dept Mat Sci & Engn, Liverpool L69 3BX, Merseyside, England
[3] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland
[4] Epichem Ltd, Wirral CH62 3QF, Merseyside, England
来源：
JOURNAL OF MATERIALS CHEMISTRY | 2004年 / 14卷 / 21期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1039/b405525j
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A range of high-permittivity (kappa) dielectric oxides are currently being investigated as alternatives to SiO2 as the dielectric insulating layer in sub-0.1 mum CMOS technology. Metalorganic chemical vapour deposition (MOCVD) and atomic layer deposition (ALD) are promising techniques for the deposition of these high-kappa dielectric oxides. Some recent developments in precursors for the MOCVD and ALD of ZrO2, HfO2, Zr- and Hf-silicate and the rare earth oxides M2O3 (M=Pr, La, Gd, Nd) are discussed.
引用
收藏
页码：3101 / 3112
页数：12
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