Resonant Scattering by Realistic Impurities in Graphene

被引：264

作者：

Wehling, T. O. ^{[1
]}

Yuan, S. ^{[2
]}

Lichtenstein, A. I. ^{[1
]}

Geim, A. K. ^{[3
]}

Katsnelson, M. I. ^{[2
]}

机构：

[1] Univ Hamburg, Inst Theoret Phys, D-20355 Hamburg, Germany

[2] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands

[3] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 05期

关键词：

ULTRASOFT PSEUDOPOTENTIALS; ELECTRON-SCATTERING; TRANSPORT; STATES;

D O I：

10.1103/PhysRevLett.105.056802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We develop a first-principles theory of resonant impurities in graphene and show that a broad range of typical realistic impurities leads to the characteristic sublinear dependence of the conductivity on the carrier concentration. By means of density functional calculations various organic groups as well as adatoms such as H absorbed to graphene are shown to create midgap states within +/- 0.03 eV around the neutrality point. A low energy tight-binding description is mapped out. Boltzmann transport theory as well as a numerically exact Kubo formula approach yield the conductivity of graphene contaminated with these realistic impurities in accordance with recent experiments.

引用

页数：4

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