Comparative measurements of the piezoelectric coefficient of a lead zirconate titanate film by piezoresponse force microscopy using electrically characterized tips

被引:22
作者
Lin, HN [1 ]
Chen, SH
Ho, ST
Chen, PR
Lin, IN
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Mingchi Inst Technol, Dept Mat Engn, Taipei 243, Taiwan
[3] Natl Tsing Hua Univ, Ctr Mat Sci, Hsinchu 300, Taiwan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 02期
关键词
D O I
10.1116/1.1562644
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report comparative measurements of the piezoelectric coefficient d(33) of a lead zirconate titanate (PZT) film by piezoresponse force microscopy based on tip/PZT/electrode and tip/electrode/PZT/ electrode configurations. With the use of electrically characterized Au-coated tips, the obtained values are in good agreement and indicate a negligible methodological effect. It is concluded that the d(33),can be reasonably determined without the use of a top electrode as long as the electrical quality of the tip is qualified. (C) 2003 American Vacuum Society. [DOI: 10.1116/1.1562644].
引用
收藏
页码:916 / 918
页数:3
相关论文
共 14 条
[1]   Polarization imprint and size effects in mesoscopic ferroelectric structures [J].
Alexe, M ;
Harnagea, C ;
Hesse, D ;
Gösele, U .
APPLIED PHYSICS LETTERS, 2001, 79 (02) :242-244
[2]   Electrical testing of gold nanostructures by conducting atomic force microscopy [J].
Bietsch, A ;
Schneider, MA ;
Welland, ME ;
Michel, B .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1160-1170
[3]   Spatial variation of ferroelectric properties in Pb(Zr0.3, Ti0.7)O3 thin films studied by atomic force microscopy [J].
Christman, JA ;
Kim, SH ;
Maiwa, H ;
Maria, JP ;
Rodriguez, BJ ;
Kingon, AI ;
Nemanich, RJ .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) :8031-8034
[4]   Probing domains at the nanometer scale in piezoelectric thin films [J].
Durkan, C ;
Welland, ME ;
Chu, DP ;
Migliorato, P .
PHYSICAL REVIEW B, 1999, 60 (23) :16198-16204
[5]   Domain nucleation and relaxation kinetics in ferroelectric thin films [J].
Ganpule, CS ;
Nagarajan, V ;
Ogale, SB ;
Roytburd, AL ;
Williams, ED ;
Ramesh, R .
APPLIED PHYSICS LETTERS, 2000, 77 (20) :3275-3277
[6]   Imaging and control of domain structures in ferroelectric thin films via scanning force microscopy [J].
Gruverman, A ;
Auciello, O ;
Tokumoto, H .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1998, 28 :101-123
[7]   Contrast mechanism maps for piezoresponse force microscopy [J].
Kalinin, SV ;
Bonnell, DA .
JOURNAL OF MATERIALS RESEARCH, 2002, 17 (05) :936-939
[8]   Piezoelectric response of epitaxial Pb(Zr0.2Ti0.8)O3 films measured by scanning tunneling microscopy [J].
Kuffer, O ;
Maggio-Aprile, I ;
Triscone, JM ;
Fischer, O ;
Renner, C .
APPLIED PHYSICS LETTERS, 2000, 77 (11) :1701-1703
[9]   Epitaxial growth of Pb(Zr0.2Ti0.8)O3 on Si and its nanoscale piezoelectric properties [J].
Lin, A ;
Hong, X ;
Wood, V ;
Verevkin, AA ;
Ahn, CH ;
McKee, RA ;
Walker, FJ ;
Specht, ED .
APPLIED PHYSICS LETTERS, 2001, 78 (14) :2034-2036
[10]   Nanoscale surface electrical properties of indium-tin-oxide films for organic light emitting diodes investigated by conducting atomic force microscopy [J].
Lin, HN ;
Chen, SH ;
Perng, GY ;
Chen, SA .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) :3976-3979