Ti/Ni/Ti/Au ohmic contact to n-type 6H-SiC

被引：8

作者：

Basak, D ^{[1
]}

Mahanty, S

机构：

[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, India

[2] Cent Glass & Ceram Res Inst, Kolkata 700032, W Bengal, India

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 98卷 / 02期

关键词：

silicon carbide; semiconductors; ohmic contact; Schottky; barrier height;

D O I：

10.1016/S0921-5107(03)00050-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a low temperature Ti/Ni/Ti/Au multilayered Ohmic contact to n-type 6H-SiC bulk sample. By using this simple metallization scheme and annealing at 750 degreesC, a low contact resistance is achieved for vertical conduction. Similar contact scheme on polished and unpolished sides of the bulk SiC substrate showed a difference in resistance due to different surface roughness. Xray diffraction results of the alloyed contact layer show that formation of TiSi2 layer might be responsible for the Ohmic contact. The roughness of the contact surface on the polished side and unpolished sides are found to be 5 and 38 nm, respectively. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：177 / 180

页数：4

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