Self-assembled growth of coaxial crystalline nanowires

被引:37
作者
Ho, GW
Wong, ASW
Wee, ATS
Welland, ME
机构
[1] Univ Cambridge, Nanosci Ctr, Cambridge CB3 0FF, England
[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
[3] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
[4] Natl Univ Singapore, Nanosci & Nanotechnol Initiat, Singapore 117542, Singapore
关键词
D O I
10.1021/nl0491733
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Coaxial crystalline nanowires have been synthesized by chemical vapor deposition. Recrystallization of a copper substrate provided a natural template for the self-assembled growth of nanowires. The core of the wires is made up of numerous faceted SiC nanowires typically 20-50 nm in diameter, encapsulated by larger hollow wires typically 0.2-1.0 mum in diameter. The nanowires are crystalline and catalyst free. A vapor-solid growth mechanism is proposed based on detailed morphology and structural characterization.
引用
收藏
页码:2023 / 2026
页数:4
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