Characterization of pulse plated Cu2O thin films

被引：23

作者：

Mahalingam, T ^{[1
]}

Chitra, JSP

Ravi, G

Chu, JP

Sebastian, PJ

机构：

[1] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India

[2] Natl Taiwan Ocean Univ, Inst Mat Engn, Chilung 202, Taiwan

[3] Alagappa Univ, Dept Crystal Growth, Karaikkudi 630003, Tamil Nadu, India

[4] Univ Nacl Autonoma Mexico, Solar Hydrogen Fuel Cell Grp, Energy Res Ctr, Temixco 62580, Morelos, Mexico

来源：

SURFACE & COATINGS TECHNOLOGY | 2003年 / 168卷 / 2-3期

关键词：

cuprous oxide film; pulse plating technique; annealing studies; etching studies; photoelectrochemical solar cells;

D O I：

10.1016/S0257-8972(03)00211-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Cuprous oxide (Cu2O) thin films are synthesised on Cu and tin oxide coated substrates by electrochemical pulse plating technique. The effect of current density and duty cycle on the growth of Cu2O films is studied. Structural studies reveal an optimum duty cycle of 33% to deposit well-crystallized Cu2O film. The effect of deposition parameters on the structural and optical properties are carried out. It is observed that annealing below 350 degreesC improved the crystallinity and grain size Of Cu2O films whereas annealing above 450 degreesC exhibited the conversion Of Cu2O into CuO. Photoelectrochemical solar cell studies showed improved performance for Cu2O electrodes and the results are discussed. (C) 2003 Elsevier Science BX All rights reserved.

引用

页码：111 / 114

页数：4

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