TiN prepared by plasma source ion implantation of nitrogen into Ti as a diffusion barrier for Si/Cu metallization

被引：4

作者：

Wang, W

Booske, JH

Liu, HL

Gearhart, SS

Shohet, JL

Bedell, S

Lanford, W

机构：

[1] Univ Wisconsin, Engn Res Ctr Plasma Aided Mfg, Madison, WI 53706 USA

[2] SUNY Albany, Dept Phys, Albany, NY 12222 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 1998年 / 13卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1557/JMR.1998.0091

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A method of forming TiN films for Si/Cu metallization by using plasma source ion implantation (PSII) of nitrogen into Ti is described. The PSII process utilizes a dose of 1 X 10(17) ions/cm(2) and peak voltages of -10, -15, and -20 kV. The properties of such TiN films as diffusion barriers between Cu and Si were investigated by annealing Cu(2000 A)/TiN/Ti/Si films in vacuum from 500 degrees C to 700 degrees C, and by analyzing with four-point probe sheet resistance measurements, Rutherford backscattering spectrometry (RBS), and Auger electron spectroscopy (AES). The TiN films made at peak voltages of -15 and -20 kV were stable barriers against Cu diffusion after annealing at temperatures higher than 600 degrees C.

引用

收藏

页码：726 / 730

页数：5

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