Synthesis of aligned gallium nitride nanowire quasi-arrays

被引：28

作者：

Li, JY

Chen, XL

Qiao, ZY

Cao, YG

He, M

Xu, T

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

[3] Univ Sci & Technol Beijing, Dept Phys Chem, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 71卷 / 03期

关键词：

D O I：

10.1007/s003390000607

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Self-aligned GaN nanowire quasi-arrays were synthesized on MgO crystal through a simple gas reaction method. They were characterized by powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray (EDX) spectroscopy and high-resolution transmission electron microscopy (HRTEM). FE-SEM images showed that the product consisted of quasi-arrays of nanowires. XRD, EDX and HRTEM indicated that the nanowires were wurtzite GaN single crystals.

引用

页码：349 / 350

页数：2

共 12 条

[1] Synthesis and structure of nanocrystal-assembled bulk GaN [J].