Local vibrational modes of weakly bound O-H complexes in Si

被引:22
作者
Nielsen, BB [1 ]
Tanderup, K
Budde, M
Nielsen, KB
Lindstrom, JL
Jones, R
Oberg, S
Hourahine, B
Briddon, P
机构
[1] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus, Denmark
[2] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
[3] Univ Exeter, Dept Phys, Exeter EX4 4QL, Devon, England
[4] Univ Lulea, Dept Math, S-95187 Lulea, Sweden
[5] Univ Newcastle, Dept Phys, Newcastle Upon Tyne, Tyne & Wear, England
来源
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷
关键词
oxygen; hydrogen; complexes; silicon; local modes; infrared absorption;
D O I
10.4028/www.scientific.net/MSF.258-263.391
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Local vibrational modes of two oxygen-hydrogen complexes have been identified with infrared absorption spectroscopy. Samples of intrinsic silicon and samples doped with O-16 or O-18 isotopes were implanted with protons and deuterons at similar to 20 K. After the implantation, infrared absorbance spectra were measured at 8 K on unannealed samples. An oxygen mode at 1077 cm(-1) and a hydrogen mode at 1879 cm(-1), which originate from the same defect OHI were observed in the as-implanted samples. Heat-treatment at 200 K produced a new center OHII with modes at 1028 and 1830 cm(-1). OHI anneals out at similar to 130 K while OHII is stable up to similar to 240 K. OHI and OHII are tentatively identified with two complexes of interstitial oxygen and bond-centred hydrogen. Ab initio theory was applied to calculate the structure and local modes of three such complexes. The results qualitatively support our tentative assignments.
引用
收藏
页码:391 / 398
页数:8
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