Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy

被引：23

作者：

Siliquini, JF ^{[1
]}

Dell, JM

Musca, CA

Smith, EPG

Faraone, L

Piotrowski, J

机构：

[1] Univ Western Australia, Dept Elect Engn & Elect, Perth, WA 6907, Australia

[2] VIGO Syst Ltd, PL-01494 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 01期

关键词：

D O I：

10.1063/1.120642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantitative assessment of p-to n-type conversion due to reactive ion etching (RTE) of p-type Hg0.71Cd0.29Te is presented using laser-beam-induced-current (LBIC) measurements. For the RIE processing conditions used (340 mT, CH4/H-2, 0.4 W/cm(2)), n-type conversion was observed in extrinsic arsenic-doped p-type Hg0.71Cd0.29Te which had previously undergone a Hg anneal to eliminate Hg vacancies. Effective doping density of the n-type converted region is determined by fitting a theoretically determined LBIC signature to the measured LBIC signal over a temperature range 80-300 K. Effective n-type doping density is the only fitting parameter used in the simulation, which was carried out using a commercial semiconductor device modeling package (SEMICAD(TM) DEVICE). This noncontact experimental technique promises to be a useful tool in the characterization of p-n junction diodes in HgCdTe, and for studying the precise nature of p to n conversion in p-type HgCdTe. (C) 1998 American Institute of Physics.

引用

页码：52 / 54

页数：3

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