ROLE OF HG IN JUNCTION FORMATION IN ION-IMPLANTED HGCDTE

被引：49

作者：

BUBULAC, LO

TENNANT, WE

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 05期

关键词：

D O I：

10.1063/1.98439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：355 / 357

页数：3

共 16 条

[1] BORON ION-IMPLANTATION IN HG1-XCDXTE [J].

BAARS, J ;

HURRLE, A ;

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FRITZSCHE, CR ;

JAKOBUS, T .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1461-1466

[2] STRUCTURE OF ION-IMPLANTED AND ANNEALED HG1-XCDXTE [J].

BAHIR, G ;

KALISH, R .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3129-3140

[3] DAMAGE AND LATTICE LOCATION STUDIES IN HG IMPLANTED HG1-XCDXTE [J].

BAHIR, G ;

BERNSTEIN, T ;

KALISH, R .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4) :247-252

[4] DEPENDENCE OF JUNCTION FORMATION ON SUBSTRATE IN IMPLANTED HGCDTE [J].

BUBULAC, LO .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :976-978

[5] THE ROLE OF EPITAXY AND SUBSTRATE ON JUNCTION FORMATION IN ION-IMPLANTED HGCDTE [J].

BUBULAC, LO .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :478-484

[6] ION-IMPLANTATION STUDY OF HGCDTE [J].

BUBULAC, LO ;

TENNANT, WE ;

SHIN, SH ;

WANG, CC ;

LANIR, M ;

GERTNER, ER ;

MARSHALL, ED .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :495-500

[7]

BUBULAC LO, 1982, J VAC SCI TECHNOL, V211, P521

[8]

BUBULAC LO, 1983, J VAC SCI TECHNOL, V13, P1946

[9] THERMAL PULSE ANNEALING OF BORON-IMPLANTED HGCDTE [J].

CONWAY, KL ;

OPYD, WG ;

GREINER, ME ;

GIBBONS, JF ;

SIGMON, TW ;

BUBULAC, LO .

APPLIED PHYSICS LETTERS, 1982, 41 (08) :750-752

[10] ELECTRICAL AND OPTICAL-PROPERTIES OF ION-IMPLANTED HG1-XCDXTE/CDTE EPILAYERS [J].

DESTEFANIS, GL ;

BOCH, R ;

ROUSSILLE, R .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :270-275

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