THE ROLE OF EPITAXY AND SUBSTRATE ON JUNCTION FORMATION IN ION-IMPLANTED HGCDTE

被引：10

作者：

BUBULAC, LO

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(85)90194-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：478 / 484

页数：7

共 14 条

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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1461 - 1466
[2] STRUCTURE OF ION-IMPLANTED AND ANNEALED HG1-XCDXTE
BAHIR, G
KALISH, R
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3129 - 3140
[3] DAMAGE AND LATTICE LOCATION STUDIES IN HG IMPLANTED HG1-XCDXTE
BAHIR, G
BERNSTEIN, T
KALISH, R
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 247 - 252
[4] ION-IMPLANTATION STUDY OF HGCDTE
BUBULAC, LO
TENNANT, WE
SHIN, SH
WANG, CC
LANIR, M
GERTNER, ER
MARSHALL, ED
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 495 - 500
[5] BUBULAC LO, 1982, J VAC SCI TECHNOL, V21, P521
[6] BUBULAC LO, 1983, J VAC SCI TECHNOL, V13, P1946
[7] ION-IMPLANTATION IN HG1-XCDXTE
DESTEFANIS, GL
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 567 - 580
[8] ELECTRICAL AND OPTICAL-PROPERTIES OF ION-IMPLANTED HG1-XCDXTE/CDTE EPILAYERS
DESTEFANIS, GL
BOCH, R
ROUSSILLE, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 270 - 275
[9] LIQUID-PHASE EPITAXIAL-GROWTH OF LARGE AREA HG1-XCDXTE EPITAXIAL LAYERS
EDWALL, DD
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TENNANT, WE
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) : 1453 - 1460
[10] KOZYREV SP, 1983, SOV PHYS SEMICOND+, V17, P560