Patterned metallization of porous silicon from electroless solution for direct electrical contact

被引:26
作者
Gole, JL [1 ]
Seals, LT
Lillehei, PT
机构
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA
关键词
D O I
10.1149/1.1393974
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The excitation of the triplet exciton leading to the "long-lived" photoluminescence characteristic of a porous silicon (PS) surface has bran used to selectively enhance the highly efficient, controlled, and patterned plating of copper and silver metal from electroless solutions. The basis of this method lies in the use of the "long-lived" excited state to promote an enhanced reduction at the PS surface. Excited fluorophors, created at the PS surface, using a Xe are lamp or HeNe laser, exhibit an interaction and reduction capability absent without optical pumping. The thickness of the metal deposit is proportional to the time and intensity of exposure and the contact resistance can be made less than 500 Omega. (C) 2000 The Electrochemical Society. S0013-4651(00)03-117-7. All rights reserved.
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页码:3785 / 3789
页数:5
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