Carbon nanotube technology for solid state and vacuum electronics
被引:30
作者:
Teo, KBK
论文数: 0引用数: 0
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机构:Univ Cambridge, Cambridge CB2 1PZ, England
Teo, KBK
Lacerda, RG
论文数: 0引用数: 0
h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Lacerda, RG
Yang, MH
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h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Yang, MH
Teh, AS
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h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Teh, AS
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机构:
Robinson, LAW
Dalal, SH
论文数: 0引用数: 0
h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Dalal, SH
Rupesinghe, NL
论文数: 0引用数: 0
h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Rupesinghe, NL
Chhowalla, M
论文数: 0引用数: 0
h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Chhowalla, M
Lee, SB
论文数: 0引用数: 0
h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Lee, SB
Jefferson, DA
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h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Jefferson, DA
Hasko, DG
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h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Hasko, DG
Amaratunga, GAJ
论文数: 0引用数: 0
h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Amaratunga, GAJ
Milne, WL
论文数: 0引用数: 0
h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Milne, WL
Legagneux, P
论文数: 0引用数: 0
h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Legagneux, P
Gangloff, L
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h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Gangloff, L
Minoux, E
论文数: 0引用数: 0
h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Minoux, E
Schnell, JP
论文数: 0引用数: 0
h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Schnell, JP
Pribat, D
论文数: 0引用数: 0
h-index: 0
机构:Univ Cambridge, Cambridge CB2 1PZ, England
Pribat, D
机构:
[1] Univ Cambridge, Cambridge CB2 1PZ, England
[2] Thales Res & Technol, F-91401 Orsay, France
来源:
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS
|
2004年
/
151卷
/
05期
关键词:
D O I:
10.1049/ip-cds:20040408
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The authors demonstrate the fabrication of solid state and vacuum electronic devices using carbon nanotubes as the active channel and emitters. Single wall and multiwall carbon nanotubes (CNT) are deposited directly on substrates using chemical vapour deposition (CVD) and plasma enhanced chemical vapour deposition (PECVD), respectively. The fabrication of top gate and side gate field effect transistors is demonstrated using single wall CNTs. Vertically aligned multiwall CNTs are used to fabricate field emitter arrays or micro-gated field emitters, which have potential application in field emission displays, microwave amplifiers or electron guns.