Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE

被引：18

作者：

Flannery, LB

Harrison, I

Lacklison, DE

Dykeman, RI

Cheng, TS

Foxon, CT

机构：

[1] Univ Nottingham, Dept Elect & Elect Engn, Nottingham NG7 2RD, England

[2] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 50卷 / 1-3期

关键词：

photoconductors; Hole concentration; mobility; GaN;

D O I：

10.1016/S0921-5107(97)00195-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have fabricated interdigital metal-semiconductor-metal ultraviolet photoconductors using p-type GaN grown by MBE. The material had a hole concentration of 10(18) cm(-3) and a mobility of 5 cm(2) V-1 s(-1). The spectral response of the detectors has been measured and it shows a peak at 364.2 nm (3.402 eV) possibly caused by excitonic effects. The transient response of the photodetector cannot be described by a single time constant. The rise and fall times of the photoresponse are different indicating that the theory usually applied to GaN photoconductors is not valid. (C) 1997 Elsevier Science S.A.

引用

页码：307 / 310

页数：4

共 13 条

[1] Electric field effects on excitons in gallium nitride [J].