Scattering and interference in epitaxial graphene

被引:650
作者
Rutter, G. M.
Crain, J. N.
Guisinger, N. P.
Li, T.
First, P. N. [1 ]
Stroscio, J. A.
机构
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[2] Natl Inst Stand & Technol, Ctr Nanoscale Sci & Technol, Gaithersburg, MD 20899 USA
关键词
D O I
10.1126/science.1142882
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
A single sheet of carbon, graphene, exhibits unexpected electronic properties that arise from quantum state symmetries, which restrict the scattering of its charge carriers. Understanding the role of defects in the transport properties of graphene is central to realizing future electronics based on carbon. Scanning tunneling spectroscopy was used to measure quasiparticle interference patterns in epitaxial graphene grown on SiC( 0001). Energy-resolved maps of the local density of states reveal modulations on two different length scales, reflecting both intravalley and intervalley scattering. Although such scattering in graphene can be suppressed because of the symmetries of the Dirac quasiparticles, we show that, when its source is atomic-scale lattice defects, wave functions of different symmetries can mix.
引用
收藏
页码:219 / 222
页数:4
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