Yttrium oxide thin films, Y2O3, grown by ion beam sputtering on Si

被引：65

作者：

Gaboriaud, RJ ^{[1
]}

Pailloux, F ^{[1
]}

Guerin, P ^{[1
]}

Paumier, F ^{[1
]}

机构：

[1] Univ Poitiers, LMP, SP2MI, F-86962 Chasseneuil Futuroscope, France

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2000年 / 33卷 / 22期

关键词：

D O I：

10.1088/0022-3727/33/22/304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of yttrium sesquioxide, Y2O3, have been deposited on Si by ion beam sputtering at room temperature and 700 degreesC under an oxygen pressure of 4 x 10(-3) Pa or by oxygen ion beam assisted deposition. The stoichiometry of these films was analysed by Rutherford backscattering spectrometry. The thickness and refractive index of the oxide were studied as functions of the wavelength by ellipsometry. The crystalline orientations of the deposited films were determined by x-ray diffraction. The micro- and nano-structure were investigated by transmission electron microscopy on cross section samples.

引用

页码：2884 / 2889

页数：6

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