Inclined substrate deposited CeO2 films by electron beam evaporation on randomly oriented metallic substrate

被引：7

作者：

Mancini, A

Celentano, G

Fabbri, F

Galluzzi, V

Petrisor, T

Rufoloni, A

Varesi, E

Vannozzi, A

Rogai, R

Boffa, V

Gambardella, U

机构：

[1] ENEA, Ctr Ric Frascati, I-00044 Frascati, Italy

[2] Pirelli Labs SpA, I-20126 Milan, Italy

[3] Univ Salerno, INFM, Dept Phys, I-84081 Baronissi, Italy

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2003年 / 17卷 / 4-6期

关键词：

D O I：

10.1142/S0217979203016777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study on CeO2 film growth on randomly oriented metallic substrate using Inclined Substrate Deposition (ISD) technique was performed in order to develop a biaxially aligned buffer layer for YBa2Cu3O7-delta (YBCO) coated conductors. The influence of deposition parameters, as the substrate inclination angle a with respect to the CeO2 vapor direction, deposition temperature and film thickness, on structural and morphological properties of the film was investigated. At substrate temperature between 200degreesC and 700degreesC a biaxial texture was observed for alpha ranging from 15degrees to 75degrees. The minimum value of the phi-scan full width at half maximum (FWHM) on (002) poles of about 13.5degrees was obtained for film 2 mum thick deposited at 200degreesC and alpha=55degrees. Morphological analyses on cross-sectioned samples revealed a columnar structure, typical for this deposition technique, with spaced grains and a tile like surface.

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页码：886 / 892

页数：7

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