Propagation delay and short-circuit power dissipation modeling of the CMOS inverter

被引:52
作者
Bisdounis, L [1 ]
Nikolaidis, S
Koufopavlou, O
机构
[1] Univ Patras, Dept Elect & Comp Engn, VLSI Design Lab, GR-26500 Patras, Greece
[2] Aristotle Univ Thessaloniki, Dept Phys, Elect & Comp Div, GR-54006 Thessaloniki, Greece
关键词
D O I
10.1109/81.662699
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper introduces a new, accurate analytical model for the evaluation of the delay and the short-circuit power dissipation of the CMOS inverter. Following a detailed analysis of the inverter operation, accurate expressions for the output response to an input ramp are derived, Based on this analysis improved analytical formulae for the calculation of the propagation delay and short-circuit power dissipation, are produced, Analytical expressions for all inverter operation regions and input waveform slopes are derived, which take into account the influences of the short-circuit current during switching, and the gate-to-drain coupling capacitance, The effective output transition time of the inverter is determined in order to map the real output voltage waveform to a ramp waveform for the model to be applicable in an inverter chain, The final results are in very good agreement with SPICE simulations.
引用
收藏
页码:259 / 270
页数:12
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