Ge/Si (001) photodetector for near infrared light

被引：38

作者：

Colace, L

Masini, G

Galluzzi, F

Assanto, G

Capellini, G

Di Gaspare, L

Evangelisti, F

机构：

[1] Univ Roma TRE, Dipartimento Ingn Elettron, I-00146 Rome, Italy

[2] Univ Roma TRE, Dipartimento Fis E Amaldi, I-00146 Rome, Italy

[3] Unita INFM, I-00146 Rome, Italy

来源：

SOLID STATE PHENOMENA | 1997年 / 54卷

关键词：

near infrared detectors; Ge/Si epitaxial growth;

D O I：

10.4028/www.scientific.net/SSP.54.55

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on Ge Schottky diodes epitaxially grown on Si(001) exhibiting a good responsivity in the near-infrared up to 1.55 mu m. The Ge layers were grown by UHV chemical vapor deposition. It was found that the photocurrent increases upon increasing the reverse bias, reaching a maximum responsivity of 0.12 A/W at 1.3 mu m for 4 V bias. The leakage current density at the saturation voltage is 1 nA/mu m(2).

引用

页码：55 / 58

页数：4

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