Very efficient light emission from bulk crystalline silicon

被引:145
作者
Trupke, T [1 ]
Zhao, JH [1 ]
Wang, AH [1 ]
Corkish, R [1 ]
Green, MA [1 ]
机构
[1] Univ New S Wales, Ctr Third Generat Photovoltaics, Sydney, NSW 2052, Australia
关键词
D O I
10.1063/1.1572473
中图分类号
O59 [应用物理学];
学科分类号
摘要
Due to its indirect bandstructure, bulk crystalline silicon is generally regarded as a poor light emitter. In contrast to this common perception, we report here on surprisingly large external photoluminescence quantum efficiencies of textured bulk crystalline silicon wafers of up to 10.2% at T=130 K and of 6.1% at room temperature. Using a theoretical model to calculate the escape probability for internally generated photons, we can conclude from these experimental figures that the radiative recombination probability or internal luminescence quantum efficiency exceeds 20% at room temperature. (C) 2003 American Institute of Physics.
引用
收藏
页码:2996 / 2998
页数:3
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