共 19 条
Very efficient light emission from bulk crystalline silicon
被引:145
作者:
Trupke, T
[1
]
Zhao, JH
[1
]
Wang, AH
[1
]
Corkish, R
[1
]
Green, MA
[1
]
机构:
[1] Univ New S Wales, Ctr Third Generat Photovoltaics, Sydney, NSW 2052, Australia
关键词:
D O I:
10.1063/1.1572473
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Due to its indirect bandstructure, bulk crystalline silicon is generally regarded as a poor light emitter. In contrast to this common perception, we report here on surprisingly large external photoluminescence quantum efficiencies of textured bulk crystalline silicon wafers of up to 10.2% at T=130 K and of 6.1% at room temperature. Using a theoretical model to calculate the escape probability for internally generated photons, we can conclude from these experimental figures that the radiative recombination probability or internal luminescence quantum efficiency exceeds 20% at room temperature. (C) 2003 American Institute of Physics.
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页码:2996 / 2998
页数:3
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