Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge

被引：31

作者：

Napolitani, E. ^{[1
,2
]}

Bisognin, G. ^{[1
,2
]}

Bruno, E. ^{[4
,5
]}

Mastromatteo, M. ^{[1
,2
]}

Scapellato, G. G. ^{[4
,5
]}

Boninelli, S. ^{[4
,5
]}

De Salvador, D. ^{[1
,2
]}

Mirabella, S. ^{[4
,5
]}

Spinella, C. ^{[3
]}

Carnera, A. ^{[1
,2
]}

Priolo, F. ^{[4
,5
]}

机构：

[1] Univ Padua, CNR, MATIS IMM, I-35131 Padua, Italy

[2] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy

[3] CNR, IMM, I-95121 Catania, Italy

[4] Univ Catania, MATIS IMM, CNR, I-95123 Catania, Italy

[5] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 20期

关键词：

GERMANIUM; MECHANISMS; SILICON;

D O I：

10.1063/1.3429084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dissolution of interstitial-type end-of-range (EOR) damage in preamorphized Ge is shown to induce a transient enhanced diffusion of an epitaxially grown boron delta at temperatures above 350 degrees C that saturates above 420 degrees C. The B diffusion events are quantitatively correlated with the measured positive strain associated with the EOR damage as a function of the annealing temperature with an energy barrier for the EOR damage dissolution of 2.1 +/- 0.3 eV. These results unambiguously demonstrate that B diffuses in Ge through a mechanism assisted by self-interstitials, and impose considering the interstitial implantation damage for the modeling of impurity diffusion in Ge. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3429084]

引用

页数：3

共 18 条

[1] High-resolution X-ray diffraction by end of range defects in self-amorphized Ge [J].