Quality and reliability in diamond deposition using CVD

被引:3
作者
Ali, N
Ahmed, W
Fan, QH
机构
[1] Manchester Metropolitan Univ, Dept Chem & Mat, Manchester M1 5GD, Lancs, England
[2] Univ Aveiro, Dept Phys, P-3810 Aveiro, Portugal
关键词
D O I
10.1179/026708400101517413
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In the manufacturing industry: quality and reliability have become very important issues for both consumer and industrial products. These issues need he addressed in order, for companies to remain competitive within the global marketplace. By way of illustration, a process known as chemical vapour deposition (CVD) is considered in this paper. This process is now widely used in industry to deposit a number of thin films for a diverse range of applications such as microelectronics, biomedical components, cutting tools, ophthalmic tenses, and decorative products. Polycrystalline diamond films have been selected to illustrate the importance of factors effecting the quality and reliability of films deposited. The effects of process parameters such as temperature. substrate properties, cleanliness, methane gas concentration and adhesion are described. In addition, in order to achieve the maximum benefit from film quality and reliability: a 'systems approach' is discussed taking into consideration substrate pretreatments, deposition stages, and post-deposition treatments.
引用
收藏
页码:421 / 426
页数:6
相关论文
共 16 条
[1]   MASS-SPECTRAL ANALYSIS OF CVD PROCESSES [J].
AHMED, W ;
AHMED, E .
SURFACE & COATINGS TECHNOLOGY, 1993, 57 (01) :91-96
[2]  
Ahmed W., 1992, Advanced Materials for Optics and Electronics, V1, P255, DOI 10.1002/amo.860010508
[3]   ULTRA-LOW PRESSURE CHEMICAL VAPOR-DEPOSITION OF POLYCRYSTALLINE AND AMORPHOUS-SILICON [J].
AHMED, W ;
MEAKIN, DB ;
STOEMENOS, J ;
ECONOMOU, NA ;
PILKINGTON, RD .
JOURNAL OF MATERIALS SCIENCE, 1992, 27 (02) :479-484
[4]  
AHMED W, 1986, THESIS U SALFORD
[5]  
AHMED W, 1986, J CRYST GROWTH, V77, P394
[6]   Role of surface pre-treatment in the CVD of diamond films on copper [J].
Ali, N ;
Fan, QH ;
Ahmed, W ;
Hassan, IU ;
Rego, CA ;
O' Hare, IP .
THIN SOLID FILMS, 1999, 355 :162-166
[7]   SELF-LIMITING ETCH DEPTHS USING SIMULTANEOUS SPUTTER ETCHING DEPOSITION TECHNIQUE [J].
BERG, S ;
GELIN, B ;
OSTLING, M ;
BABULANAM, SM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :470-473
[8]  
FARROW RC, 1974, J ELECTROCHEM SOC, V121, P399
[9]  
Hitchman M. L., 1987, Chemtronics, V2, P147
[10]   SOME RECENT TRENDS IN THE PREPARATION OF THIN-LAYERS BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].
HITCHMAN, ML ;
AHMED, W .
VACUUM, 1984, 34 (10-1) :979-986