Vertically aligned ZnO nanowires produced by a catalyst-free thermal evaporation method and their field emission properties

被引：102

作者：

Ham, H ^{[1
]}

Shen, GZ ^{[1
]}

Cho, JH ^{[1
]}

Lee, TJ ^{[1
]}

Seo, SH ^{[1
]}

Lee, CJ ^{[1
]}

机构：

[1] Hanyang Univ, Dept Nanotechnol, Seoul 133791, South Korea

来源：

CHEMICAL PHYSICS LETTERS | 2005年 / 404卷 / 1-3期

关键词：

D O I：

10.1016/j.cplett.2005.01.084

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Vertically aligned ZnO nanowires have been synthesized on Si substrate by catalyst-free thermal evaporating metallic zinc powder at a low temperature of 600 degreesC. Studies found that the ZnO nanowires are single-crystalline wurtzite structures with 70 nm in diameter and 10 pm in length. The turn on field of the ZnO nanowires was about 6.2 V/mum at a current density of 0.1 muA/cm(2), and the emission current density reached 1 mA/cm(2) at an applied field of about 15.0 V/mum. Field emission property from the ZnO nanowires was enough high level to be applicable to field emission displays and vacuum microelectronic devices. (C) 2005 Elsevier B.V. All rights reserved.

引用

页码：69 / 73

页数：5

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