Universal shapes of self-organized semiconductor quantum dots:: Striking similarities between InAs/GaAs(001) and Ge/Si(001)

被引：90

作者：

Costantini, G

Rastelli, A

Manzano, C

Songmuang, R

Schmidt, OG

Kern, K

von Känel, H

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] Politecn Milan, INFM, I-22100 Como, Italy

[3] Politecn Milan, Dipartimento Fis, LNESS, I-22100 Como, Italy

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 23期

关键词：

D O I：

10.1063/1.1829164

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The model systems for self-organized quantum dots formed from elemental and compound semiconductors, namely Ge grown on Si(001) and InAs on GaAs(001), are comparatively studied by scanning tunneling microscopy. It is shown that in both material combinations only two well-defined families of faceted and defect-free nanocrystals exist (and coexist). These three-dimensional islands, pyramids, and domes show common morphological characteristics, independent of the specific material system. A universal behavior is further demonstrated in the capping-passivation process that turns the nanocrystals in true quantum dots. (C) 2004 American Institute of Physics.

引用

页码：5673 / 5675

页数：3

共 30 条

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