Role of oxygen in enhancing N-type conductivity of CuInS2 thin films

被引：26

作者：

Ben Rabeh, M. ^{[1
]}

Kanzari, M. ^{[1
]}

Rezig, B. ^{[1
]}

机构：

[1] ENIT, Lab Photovolt & Mat Semi Conduct, Tunis 1002, Tunisia

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 15期

关键词：

CuInS2; thin films; annealing; structural properties; optical properties; electrical properties;

D O I：

10.1016/j.tsf.2006.12.081

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Post-growth treatments in air atmosphere were performed on CuInS2 films prepared by the single-source thenrial evaporation method. Their effect on the structural, optical and electrical properties of the films was studied by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), optical reflection and transmission and resistance measurements. The films were annealed from 100 to 350 degrees C in air. The stability of the observed N-type conductivity after annealing depends strongly on the annealing temperature. Indeed it is shown that for annealing temperatures above 200 degrees C the N-type conductivity is stable. The resistance of the N-CuInS2 thin films correlates well with the corresponding annealing temperature. The samples after annealing have direct bandgap energies of 1.45-1.50 eV. (C) 2007 Published by Elsevier B.V.

引用

页码：5943 / 5948

页数：6

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