A conformal ruthenium electrode for MIM capacitors in gbit DRAMs using the CVD technology based on oxygen-controlled surface reaction

被引：9

作者：

Hiratani, M ^{[1
]}

Nabatame, T ^{[1
]}

Matsui, Y ^{[1
]}

Shimamoto, Y ^{[1
]}

Sasago, Y ^{[1
]}

Nakamura, Y ^{[1
]}

Ohji, Y ^{[1
]}

Asano, I ^{[1
]}

Kimura, S ^{[1
]}

机构：

[1] Hitachi Res Lab, Cent Res Lab, Kokubunji, Tokyo, Japan

来源：

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2000年

关键词：

D O I：

10.1109/VLSIT.2000.852786

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We have developed a novel CVD-Ru technique, clarified the growth mechanism and fabricated BST capacitors. The growth mechanism is dominated by the surface reaction which is rate-determined by the oxygen supply. Well-tuned conditions enable fabrication of any type of storage node: a concave type with a uniform 20-nm film thickness and a pillar type from a buried film. The electrode/BST interface is degraded by the reduction-oxidation reaction during the Ru-CVD, but post-annealing restores the ideal I-V characteristics.

引用

页码：102 / 103

页数：2