Ruthenium films prepared by liquid source chemical vapor deposition using bis-(ethylcyclopentadienyl)ruthenium

被引：53

作者：

Aoyama, T ^{[1
]}

Eguchi, K ^{[1
]}

机构：

[1] Toshiba Corp, Semicond Co, Microelect Engn Lab, ULSI Prod Engn Lab,Isogo Ku, Yokohama, Kanagawa, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 10A期

关键词：

Ru; CVD; electrode; capacitor; liquid source; Ru(C2H5C5H4)(2); O-2;

D O I：

10.1143/JJAP.38.L1134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ruthenium (Ru) films were deposited by liquid source chemical vapor deposition using bis-(ethylcyclopentadienyl)ruthenium (RU(C2H5C5H4)(2)) The crystalline structure, resistivity and residual impurities in the Ru films were investigated. The Ru films were polycrystalline and had a columnar structure they showed a low resistivity of about 20 mW cm, which is sufficiently low for them to be used as capacitor electrodes.

引用

页码：L1134 / L1136

页数：3

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