Possible origin of ferromagnetism in (Ga,Mn)N

被引：95

作者：

Zajac, M

Gosk, J

Grzanka, E

Kaminska, M

Twardowski, A

Strojek, B

Szyszko, T

Podsiadlo, S

机构：

[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

[2] Warsaw Univ Technol, Fac Chem, PL-00664 Warsaw, Poland

[3] Warsaw Univ Technol, Fac Chem, PL-00662 Warsaw, Poland

[4] PAS, High Pressure Res Ctr, PL-01142 Warsaw, Poland

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 08期

关键词：

D O I：

10.1063/1.1559939

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferromagnetic behavior of GaN doped with Mn (Ga1-zMnzN) grown by the ammonothermal and chemical transport methods is discussed in terms of a second phase (ferromagnetic one) produced during the growth process. The reference manganese nitride samples grown by the same method as (Ga,Mn)N reveal room-temperature ferromagnetic behavior, depending on the growth details. Different MnxNy phases are suggested to be responsible for ferromagnetic behavior of (Ga,Mn)N. (C) 2003 American Institute of Physics.

引用

页码：4715 / 4717

页数：3

共 23 条

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