GaAs-based near-infrared omnidirectional reflector

被引：60

作者：

Park, Y ^{[1
]}

Roh, YG

Cho, CO

Jeon, H

Sung, MG

Woo, JC

机构：

[1] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea

[2] Seoul Natl Univ, Interuniv Semiconduct Res Ctr, Seoul 151747, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 17期

关键词：

D O I：

10.1063/1.1569045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We introduce a compound-semiconductor-based omnidirectional reflector. A four-layer-pair stack of GaAs/AlAs was grown epitaxially using molecular-beam epitaxy, and was then converted to a GaAs/Al2O3 multilayer stack by selective oxidation of the AlAs layers. The resultant one-dimensional photonic crystal exhibited omnidirectional reflection properties in near-IR wavelength range below 1 mum. Reflectance spectra measured at various incidence angles and polarizations were observed to be in good agreement with theoretically simulated results. (C) 2003 American Institute of Physics.

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页码：2770 / 2772

页数：3

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