Optically active hydrogen dimers in crystalline silicon

被引：17

作者：

Safonov, AN ^{[1
]}

Lightowlers, EC ^{[1
]}

Davies, G ^{[1
]}

机构：

[1] Kings Coll London, Dept Phys, Strand, London WC2R 2LS, England

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.56.R15517

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the effects of uniaxial stress and magnetic-field perturbations and of H-D isotope substitution on luminescence at 1.151 and 1.138 eV in crystalline silicon. The two centers responsible for these luminescence systems are shown to have symmetry and atomic compositions similar to those predicted for hydrogen dimers. The centers create acceptor (-/0) levels near the conduction-band minima and are paramagnetically inactive in their neutral states. The mechanism of formation of the defects is discussed.

引用

页码：R15517 / R15520

页数：4

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