Amorphous-to-polycrystalline silicon transition in hot wire cell method

被引：9

作者：

Ichikawa, M ^{[1
]}

Tsushima, T ^{[1
]}

Yamada, A ^{[1
]}

Konagai, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 152, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 08期

关键词：

hot wire cell method; amorphous silicon; poly-silicon; thin-film deposition; low-temperature deposition;

D O I：

10.1143/JJAP.39.4712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hot Wire Cell method has been newly developed and successfully applied to grow polycrystalline silicon films at a low temperature with a relatively high growth rate. In the Hot Wire Cell method, reactant gases are decomposed as a result of reaction with a heated tungsten filament placed near a substrate and polycrystalline silicon films can be deposited at a growth rate of 0.9 nm/s without hydrogen dilution. The aim crystallinity is changed from polycrystalline to amorphous by decreasing the total pressure. The model calculation of the Hot Wire Cell method is carried out and it is assumed that transition of crystallinity may be due to the shift in the preferential impinged radicals. X-ray analysis clearly showed that the films frown at the filament temperature of 1700 degrees C have a very strong (220) preferential orientation. The alms consist of large grains as well as small grains. These results suggest that the Hot Wire Cell method is a promising candidate to grow device-grade polycrystalline silicon films for photovoltaic application.

引用

页码：4712 / 4715

页数：4

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