Noise-Margin Analysis for Organic Thin-Film Complementary Technology

被引：52

作者：

Bode, Dieter ^{[1
,2
]}

Rolin, Cedric ^{[1
,3
]}

Schols, Sarah ^{[1
,2
]}

Debucquoy, Maarten ^{[1
,2
]}

Steudel, Soeren ^{[1
]}

Gelinck, Gerwin H. ^{[4
]}

Genoe, Jan ^{[1
]}

Heremans, Paul ^{[1
,2
]}

机构：

[1] Interuniv Microelect Ctr, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

[3] Catholic Univ Louvain, PCPM, B-1348 Louvain, Belgium

[4] TNO, Holst Ctr, NL-5605 Eindhoven, Netherlands

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 01期

关键词：

Complementary circuits; n-type organic thin-film transistor (n-type OTFT); yield estimation; FIELD-EFFECT TRANSISTORS; LOGIC-CIRCUITS; LOW-VOLTAGE; MONOLAYERS; PENTACENE; CRITERIA; SHIFT; C-60;

D O I：

10.1109/TED.2009.2035546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Parameter variation in organic thin-film transistor (OTFT) technology is known to limit the yield of digital circuits. It is expected that complementary OTFT technology (C-TFT) will reduce the sensitivity to parameter variations. In this paper, we quantify the dependence of yield on transistor parameter variations for C-TFT and compare it to unipolar logic. First, a basic inverter model is developed and fitted to measured transfer characteristics of organic complementary inverters. Next, the inverter model is used in numerical simulations to determine how the noise margin of the inverter, a measure for its reliable operation, changes as a function of transistor parameter variations. The noise margin is significantly improved with respect to p-type-only inverters with similar parameters. Finally, we perform circuit-level yield predictions as a function of parameter spread using the noise-margin simulations performed earlier.

引用

页码：201 / 208

页数：8

共 33 条

[1] Solution processible organic transistors and circuits based on a C70 methanofullerene -: art. no. 054503 [J].

Anthopoulos, TD ;

de Leeuw, DM ;

Cantatore, E ;

van 't Hof, P ;

Alma, J ;

Hummelen, JC .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (05)

[2]

BOHM M, 2006, P IEEE INT SOL STAT, P1034

[3] A 13.56-MHz RFID system based on organic transponders [J].

Cantatore, Eugenio ;

Geuns, Thomas C. T. ;

Gelinck, Gerwin H. ;

van Veenendaal, Erik ;

Gruijthuijsen, Arnold F. A. ;

Schrijnemakers, Laurens ;

Drews, Steffen ;

de Leeuw, Dago M. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (01) :84-92

[4] Influence of transistor parameters on the noise margin of organic digital circuits [J].

De Vusser, S ;

Genoe, J ;

Heremans, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (04) :601-610

[5] Flexible active-matrix displays and shift registers based on solution-processed organic transistors [J].

Gelinck, GH ;

Huitema, HEA ;

Van Veenendaal, E ;

Cantatore, E ;

Schrijnemakers, L ;

Van der Putten, JBPH ;

Geuns, TCT ;

Beenhakkers, M ;

Giesbers, JB ;

Huisman, BH ;

Meijer, EJ ;

Benito, EM ;

Touwslager, FJ ;

Marsman, AW ;

Van Rens, BJE ;

De Leeuw, DM .

NATURE MATERIALS, 2004, 3 (02) :106-110

[6] High mobility n-channel organic thin-film transistors and complementary inverters -: art. no. 064502 [J].

Gundlach, DJ ;

Pernstich, KP ;

Wilckens, G ;

Grüter, M ;

Haas, S ;

Batlogg, B .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (06)

[7] NOISE MARGIN CRITERIA FOR DIGITAL LOGIC-CIRCUITS [J].

HAUSER, JR .

IEEE TRANSACTIONS ON EDUCATION, 1993, 36 (04) :363-368

[8]

JAEGER RC, 1997, MCGRAW HILL SERIES E

[9] Gate dielectric surface treatment techniques for organic thin film transistor [J].

Kang, Sungku ;

Jung, Sukmo ;

Park, Jacyoung ;

Lee, Hoo-Jeong ;

Yi, Moonsuk .

MICROELECTRONIC ENGINEERING, 2007, 84 (5-8) :1503-1506

[10] Pentacene-based organic field-effect transistors [J].

Kitamura, Masatoshi ;

Arakawa, Yasuhiko .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (18)

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