GaAs(001) surface under conditions of low As pressure: Evidence for a novel surface geometry

被引:179
作者
Lee, SH
Moritz, W
Scheffler, M
机构
[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
[2] Univ Munich, Inst Kristallog & Angew Mineral, D-80333 Munich, Germany
关键词
D O I
10.1103/PhysRevLett.85.3890
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using density-functional theory we identify a new low-energy structure for GaAs(001) in an As-poor environment. The discovered geometry is qualitatively different from the usual surface-dimer based reconstructions of III-V semiconductor (001) surfaces. The stability of the new structure, which has a c(8 x 2) periodicity, is explained in terms of bond saturation and favorable electrostatic interactions between surface atoms. Simulated scanning tunneling microscopy images are in good agreement with experimental data, and a low-energy electron diffraction analysis supports the theoretical prediction.
引用
收藏
页码:3890 / 3893
页数:4
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