GaAs(001) surface under conditions of low As pressure: Evidence for a novel surface geometry

被引：179

作者：

Lee, SH

Moritz, W

Scheffler, M

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[2] Univ Munich, Inst Kristallog & Angew Mineral, D-80333 Munich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.85.3890

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using density-functional theory we identify a new low-energy structure for GaAs(001) in an As-poor environment. The discovered geometry is qualitatively different from the usual surface-dimer based reconstructions of III-V semiconductor (001) surfaces. The stability of the new structure, which has a c(8 x 2) periodicity, is explained in terms of bond saturation and favorable electrostatic interactions between surface atoms. Simulated scanning tunneling microscopy images are in good agreement with experimental data, and a low-energy electron diffraction analysis supports the theoretical prediction.

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收藏

页码：3890 / 3893

页数：4

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