STRUCTURES OF THE GA-RICH 4X2 AND 4X6 RECONSTRUCTIONS OF THE GAAS(001) SURFACE

被引：187

作者：

XUE, QK

HASHIZUME, T

ZHOU, JM

SAKATA, T

OHNO, T

SAKURAI, T

机构：

[1] UNIV OSAKA PREFECTURE, DEPT COORDINATED SCI, SAKAI, OSAKA 591, JAPAN

[2] TOHOKU UNIV, INST MAT RES, AOBA KU, SENDAI, MIYAGI 98077, JAPAN

[3] NATL RES INST MET, TSUKUBA, IBARAKI 305, JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.74.3177

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Utilizing the advantages of migration enhanced epitaxy, a systematic molecular beam epitaxyscanning tunneling microscopy investigation was carried out for the first time on the GaAs(001) Ga-rich 4×2 and 4×6 phases and a unified structural model has been proposed based on a first-principles total-energy calculation. The 4×2 phase consists of two Ga dimers on the top layer and another Ga dimer at the third layer, a mirror image of the As-rich 2×4 phase, and the 4×6 phase accommodates the periodic array of Ga clusters at the 4×6 unit corner on top of the 4×2 phase. © 1995 The American Physical Society.

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页码：3177 / 3180

页数：4

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