STRUCTURE OF GAAS(100)-C(8X2) DETERMINED BY SCANNING-TUNNELING-MICROSCOPY

被引：99

作者：

SKALA, SL

HUBACEK, JS

TUCKER, JR

LYDING, JW

CHOU, ST

CHENG, KY

机构：

[1] UNIV ILLINOIS,BECKMAN INST,URBANA,IL 61801

[2] UNIV ILLINOIS,MICROELECTR LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.48.9138

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The scanning tunneling microscope (STM) has been used to study the c (8 X 2) reconstruction of GaAs(100). High-resolution STM images imply this surface is composed of equal numbers of arsenic and gallium atoms, resolving disagreements in the interpretation of several previous experiments. The c(8 X 2) structure arises from an ordered arrangement of (4 X 2) subunits, with each subunit containing two As dimers and two Ga dimers.

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页码：9138 / 9141

页数：4

相关论文

共 18 条

[1] SURFACE PHASES OF GAAS(100) AND ALAS(100) [J].

BACHRACH, RZ ;

BAUER, RS ;

CHIARADIA, P ;

HANSSON, GV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :797-801

[2] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].

BIEGELSEN, DK ;

BRINGANS, RD ;

NORTHRUP, JE ;

SWARTZ, LE .

PHYSICAL REVIEW B, 1990, 41 (09) :5701-5706

[3] ATOM-RESOLVED IMAGING AND SPECTROSCOPY ON THE GAAS(001) SURFACE USING TUNNELING MICROSCOPY [J].

BRESSLERHILL, V ;

WASSERMEIER, M ;

POND, K ;

MABOUDIAN, R ;

BRIGGS, GAD ;

PETROFF, PM ;

WEINBERG, WH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1881-1885

[4] CHEMISORPTION AND DECOMPOSITION OF TRIMETHYLGALLIUM ON GAAS(100) [J].

CREIGHTON, JR .

SURFACE SCIENCE, 1990, 234 (03) :287-307

[5] SURFACE STOICHIOMETRY VARIATION ASSOCIATED WITH GAAS (001) RECONSTRUCTION TRANSITIONS [J].

DEPARIS, C ;

MASSIES, J .

JOURNAL OF CRYSTAL GROWTH, 1991, 108 (1-2) :157-172

[6] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J].

DRATHEN, P ;

RANKE, W ;

JACOBI, K .

SURFACE SCIENCE, 1978, 77 (01) :L162-L166

[7] STRUCTURE AND COMPOSITION OF GAAS(001) SURFACES [J].

FALTA, J ;

TROMP, RM ;

COPEL, M ;

PETTIT, GD ;

KIRCHNER, PD .

PHYSICAL REVIEW LETTERS, 1992, 69 (21) :3068-3071

[8] MOLECULAR-BEAM EPITAXY GROWTH MECHANISMS ON GAAS(100) SURFACES [J].

FARRELL, HH ;

HARBISON, JP ;

PETERSON, LD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1482-1489

[9] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION CHARACTERISTIC ABSENCES IN GAAS(100) (2X4)-AS - A TOOL FOR DETERMINING THE SURFACE STOICHIOMETRY [J].

FARRELL, HH ;

PALMSTROM, CJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :903-907

[10] HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDIES OF GAAS (100) SURFACES [J].

FRANKEL, DJ ;

YU, C ;

HARBISON, JP ;

FARRELL, HH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1113-1118