3D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-κ dielectric on 1P6M-0.18μm-CMOS

被引：54

作者：

Yu, DS ^{[1
]}

Chin, A ^{[1
]}

Laio, CC ^{[1
]}

Lee, CF ^{[1
]}

Cheng, CF ^{[1
]}

Chen, WJ ^{[1
]}

Zhu, C ^{[1
]}

Li, MF ^{[1
]}

Yoo, WJ ^{[1
]}

McAlister, SP ^{[1
]}

Kwong, DL ^{[1
]}

机构：

[1] Univ Syst Taiwan, Natl Chiao Tung Univ, Dept Elect Engn, Nano Sci Tech Ctr, Hsinchu, Taiwan

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, we demonstrate 3D integration of self-aligned IrO2(Hf)/LaAlO3/GOI CMOSFETs above 0.18 pm Si CMOSFETs. At EOT=1.4nm, the novel IrO2(Hf) dual gates (4.4 and 5.1 eV workfunction) on control 2D LaAlO3/Si devices have high electron and hole mobilities of 203 and 67 cm(2)/Vs. On the 3D structure the LaAlO3/GOI shows even higher 389 and 234 cm(2)/Vs mobilities, and process compatibility with current Si VLSI. The higher drive current, larger integration density, shorter interconnects distance, and simple process of 3D approach can help solve the AC power issue and 2D scaling limitation.

引用

页码：181 / 184

页数：4

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