In0.52Al0.48As/InAs/InxAl1-xAs pseudomorphic HEMT's on InP

被引：16

作者：

Chin, A ^{[1
]}

Liao, CC ^{[1
]}

Tsai, C ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,DEPT ELECT ENGN,HSINCHU 300,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 04期

关键词：

TRANSISTORS; GAINAS;

D O I：

10.1109/55.563314

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dc and microwave performance of an InAs channel HEMT is reported. Room-temperature electron mobility as high as 20 200 cm(2)/Vs is measured, with a high carrier concentration of 2.7x10(12) cm(-2). DC extrinsic transconductance of 714 mS/mm is measured and a unity-current-gain cut-off frequency of 50 GHz is obtained for a 1.1-mu m gate length HEMT. The success of achieving superior Hall mobility and device performance is strongly dependent on the InxAl1-xAs buffer layer design that changes the lattice constant from lattice-matched In0.52Al0.48As to In0.75Al0.25As. The multiple In0.52Al0.48As/InAs monolayer superlattices buffer achieves the best performance as compared to the step-graded InxAl1-xAs and the uniform In0.75Al0.25As buffer.

引用

页码：157 / 159

页数：3

共 8 条

[1] DC AND MICROWAVE CHARACTERISTICS OF SUB-0.1-MU-M GATE-LENGTH PLANAR-DOPED PSEUDOMORPHIC HEMTS [J].

CHAO, PC ;

SHUR, MS ;

TIBERIO, RC ;

DUH, KHG ;

SMITH, PM ;

BALLINGALL, JM ;

HO, P ;

JABRA, AA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (03) :461-473

[2] EFFECTS OF SUBSTRATE ORIENTATION, PSEUDOMORPHIC GROWTH AND SUPERLATTICE ON ALLOY SCATTERING IN MODULATION DOPED GAINAS [J].

CHIN, A ;

CHANG, TY ;

OURMAZD, A ;

MONBERG, EM ;

CHANG, AM ;

KURDAK, C .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :466-469

[3] ACHIEVEMENT OF EXCEPTIONALLY HIGH MOBILITIES IN MODULATION-DOPED GA1-XINXAS ON INP USING A STRESS COMPENSATED STRUCTURE [J].

CHIN, A ;

CHANG, TY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02) :364-366

[4] HIGH-PERFORMANCE HIGHLY STRAINED GA0.23IN0.77AS/AL0.48IN0.52AS MODFETS OBTAINED BY SELECTIVE AND SHALLOW ETCH GATE RECESS TECHNIQUES [J].

CHOUGH, KB ;

CHANG, TY ;

FEUER, MD ;

SAUER, NJ ;

LALEVIC, B .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (09) :451-453

[5] GA0.4IN0.6AS/AL0.55IN0.45AS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

KUO, JM ;

CHANG, TY .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) :380-382

[6]

Mishra U. K., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P101, DOI 10.1109/IEDM.1989.74237

[7] CHARACTERISTICS OF STRAINED IN0.65GA0.35AS/IN0.52AL0.48AS HEMT WITH OPTIMIZED TRANSPORT PARAMETERS [J].

NG, GI ;

HONG, WP ;

PAVLIDIS, D ;

TUTT, M ;

BHATTACHARYA, PK .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) :439-441

[8] 50-NM SELF-ALIGNED-GATE PSEUDOMORPHIC ALINAS GAINAS HIGH ELECTRON-MOBILITY TRANSISTORS [J].

NGUYEN, LD ;

BROWN, AS ;

THOMPSON, MA ;

JELLOIAN, LM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) :2007-2014

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