EFFECTS OF SUBSTRATE ORIENTATION, PSEUDOMORPHIC GROWTH AND SUPERLATTICE ON ALLOY SCATTERING IN MODULATION DOPED GAINAS

被引：13

作者：

CHIN, A

CHANG, TY

OURMAZD, A

MONBERG, EM

CHANG, AM

KURDAK, C

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

[2] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91021-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The possibility of reducing alloy scattering in MBE Ga1-xIn(x)As has been studied experimentally by growing modulation doped heterostructures (A) with an InAs/GaInAs superlattice 2DEG channel, (B) on a vicinal (110) InP substrate, and (C) with a strain compensated pseudomorphic channel. The maximum 77 K mobility obtained in each case is (A) 60,600, (B) 69,300, and (C) 123,100 cm2/V.s, using x = 0.50, 0.53, and 0.80, respectively. Partial alloy ordering is observed in case (B). Cyclotron resonance measurements indicate that the reduction of m* contributes much less to the enhancement of mobility in case (C) than the alloy composition factor x(1-x). Alloy ordering may also be important.

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收藏

页码：466 / 469

页数：4

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