Complementary in-situ and post-deposition diagnostics of thin film semiconductor structures

被引:18
作者
Pickering, C [1 ]
机构
[1] Def Res Agcy, Elect Sector, Malvern WR14 3PS, Worcs, England
关键词
ellipsometry; scattering; real-time; control; Si; SiGe;
D O I
10.1016/S0040-6090(97)00855-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In-situ and in-line monitoring techniques based on spectroscopic ellipsometry and laser light scattering have been used for process definition and to provide insights into process science in the strained SiGe/Si system. The development of the techniques for real-time closed loop control of alloy composition and growth rate are discussed with emphasis on the requirements for rapid data analysis. Crown Copyright (C) 1998 Published by Elsevier Science S.A.
引用
收藏
页码:406 / 415
页数:10
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