Real-time monitoring of Si1-xGex heteroepitaxial growth using laser light scattering and spectroscopic ellipsometry

被引：6

作者：

Pickering, C

Carline, RT

Hope, DAO

Robbins, DJ

机构：

[1] Defense Research Agency, Malvern

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1995年 / 152卷 / 01期

关键词：

D O I：

10.1002/pssa.2211520110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Laser light scattering and real-time spectroscopic ellipsometry have been used as in situ monitors for heteroepitaxial growth of Si1-xGex and Si layers. The techniques have been used to optimize conditions for growth of smooth, high quality epilayers and the potential indicated for real-time control of morphology, composition,and thickness.

引用

收藏

页码：95 / 102

页数：8

相关论文

共 11 条

[1] MINIMAL-DATA APPROACHES FOR DETERMINING OUTER-LAYER DIELECTRIC RESPONSES OF FILMS FROM KINETIC REFLECTOMETRIC AND ELLIPSOMETRIC MEASUREMENTS [J].

ASPNES, DE .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1993, 10 (05) :974-983

[2] SPECTROSCOPIC ELLIPSOMETRY OF SI1-XGEX EPILAYERS OF ARBITRARY COMPOSITION 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.255 [J].

CARLINE, RT ;

PICKERING, C ;

ROBBINS, DJ ;

LEONG, WY ;

PITT, AD ;

CULLIS, AG .

APPLIED PHYSICS LETTERS, 1994, 64 (09) :1114-1116

[3] DIELECTRIC FUNCTION SPECTRA OF STAINED AND RELAXED SI(1-X)GE(X) ALLOYS (X=0-0.25) [J].

PICKERING, C ;

CARLINE, RT .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (09) :4642-4647

[4] REAL-TIME SPECTROSCOPIC ELLIPSOMETRY MONITORING OF SI1-XGEX/SI EPITAXIAL-GROWTH [J].

PICKERING, C ;

HOPE, DAO ;

CARLINE, RT ;

ROBBINS, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :740-744

[5]

PICKERING C, 1994, MATER RES SOC SYMP P, V324, P53

[6] IN-SITU DUAL-WAVELENGTH AND EX-SITU SPECTROSCOPIC ELLIPSOMETRY STUDIES OF STRAINED SIGE EPITAXIAL LAYERS AND MULTIQUANTUM-WELL STRUCTURES [J].

PICKERING, C ;

CARLINE, RT ;

ROBBINS, DJ ;

LEONG, WY ;

GRAY, DE ;

GREEF, R .

THIN SOLID FILMS, 1993, 233 (1-2) :126-130

[7] CORRELATION OF INSITU ELLIPSOMETRIC AND LIGHT-SCATTERING DATA OF SILICON-BASED MATERIALS WITH POSTDEPOSITION DIAGNOSTICS [J].

PICKERING, C .

THIN SOLID FILMS, 1991, 206 (1-2) :275-282

[8]

PICKERING C, 1994, IN SITU OPTICAL STUD, V3, P817

[9] EVOLUTION OF SURFACE-MORPHOLOGY AND STRAIN DURING SIGE EPITAXY [J].

PIDDUCK, AJ ;

ROBBINS, DJ ;

CULLIS, AG ;

LEONG, WY ;

PITT, AM .

THIN SOLID FILMS, 1992, 222 (1-2) :78-84

[10] A MODEL FOR HETEROGENEOUS GROWTH OF SI1-XGEX FILMS FROM HYDRIDES [J].

ROBBINS, DJ ;

GLASPER, JL ;

CULLIS, AG ;

LEONG, WY .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (06) :3729-3732