IN-SITU DUAL-WAVELENGTH AND EX-SITU SPECTROSCOPIC ELLIPSOMETRY STUDIES OF STRAINED SIGE EPITAXIAL LAYERS AND MULTIQUANTUM-WELL STRUCTURES

被引：14

作者：

PICKERING, C ^{[1
]}

CARLINE, RT ^{[1
]}

ROBBINS, DJ ^{[1
]}

LEONG, WY ^{[1
]}

GRAY, DE ^{[1
]}

GREEF, R ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON, DEPT CHEM, SOUTHAMPTON SO9 5NH, HANTS, ENGLAND

来源：

THIN SOLID FILMS | 1993年 / 233卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90073-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In-situ dual-wavelength ellipsometry and ex-situ spectroscopic ellipsometry have been used to study strained Si1-xGex/Si multilayers. Reference dielectric function spectra of strained Si1-xGex with 0.06<x<0.29 have been obtained for the first time and an interpolation procedure based on the strain dependence of the dominant critical point energies developed. Good agreement with composition and thickness values from corroborative techniques was obtained when the effects of strain were taken into account.

引用

页码：126 / 130

页数：5

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