CORRELATION OF INSITU ELLIPSOMETRIC AND LIGHT-SCATTERING DATA OF SILICON-BASED MATERIALS WITH POSTDEPOSITION DIAGNOSTICS

In this paper a novel dual-wavelength ellipsometry, laser light scattering system for in situ monitoring of epitaxial silicon and SiGe vapour phase growth is described. The complementary aspects of scattering and ellipsometry measurements are emphasized and have been used to optimize conditions for production of a bare silicon surface stable at 850-degrees-C, followed by growth of high quality homoepitaxial layers. The highest epsilon-2 (epsilon = epsilon-1 + i-epsilon-2) values from Si <100> surfaces so far reported have been obtained from these microscopically smooth silicon epitaxial layers. In situ ellipsometry and light scattering have been applied for the first time to Si/Si0.77Ge0.23 multilayer growth. The results have been correlated with angle-resolved light scattering, scanning optical microscopy. cross-sectional transmission electron microscopy, secondary ion mass spectrometry etc. to interpret the real-time results.